CZ wafer film deposition processing
Film deposition is possible on wafers ranging from 2 inches to 12 inches.
Enatec Co., Ltd.'s CZ wafer film deposition processing can accommodate film deposition on wafers ranging from 2 inches to 450 mm, depending on the type of film. Oxide films: thermal oxidation, RTO, LP-TEOS, HDP-USG, P-TEOS, PSG, BPSG, BSG, LP-CVD, PE-CVD Nitride films: HCD-SiN, DCS-SiN, P-SiN, LP-SiN, LP-CVD, PE-CVD Metal films: TaN, Ta, Cu, Al, AlN, Al-Si, Al-Si-Cu, Ni, W, W-Si-Cu Others: Poly-Si, a-Si, SiC, Low-k (SiOC-based, organic chemistry-based), graphene films, graphite * Depending on the type of film, such as SiO2, SiN, SiON, we can accommodate from one piece. * We can also handle Ti, Cu, Cr, Ni, etc., through sputter deposition. * Resist coating/exposure/etching can be accommodated from 4 inches to 12 inches. * We can also provide consistent support for wafers with test patterns (from 6 inches to 12 inches) based on specifications. * We accept exposure/etching with provided reticles (8 inches and 12 inches). For more details, please contact us.
- Company：エナテック 東京本社
- Price：Other
